2N7002H6327XTSA2 vs 2N7002LT1G Comparison
Detailed side-by-side comparison of 2N7002H6327XTSA2 by Infineon and 2N7002LT1G by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | 2N7002H6327XTSA2 | 2N7002LT1G |
|---|---|---|
| Brand | Infineon | onsemi |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.08 | $0.02 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOS (Planar) | MOSFET |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) | 300 mA (Ta) | β |
| Power Dissipation (PD) | 500 mW (Ta) | β |
| On-State Resistance (RDS(on)) | 3 ohm max @ VGS = 10 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Operating Temperature Range | -55C to +150C (Tj) | [DATA_NEEDED: operating temperature range] |
| Package | PG-SOT23 (SOT-23-3) | SOT-23-3 (TO-236) |
| Mounting Type | Surface Mount | Surface Mount |
| Channel Mode | Enhancement | Enhancement Mode |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| Qualification | Industrial / Commercial Grade | β |
| Polarity | β | N-Channel |
| Drain-Source Voltage VDSS | β | 60 V |
| Continuous Drain Current ID | β | 115 mA (Tc) |
| Power Dissipation PD | β | 225 mW (Ta) |
| Maximum RDS(on) | β | 7.5 ohm @ VGS = 5 V |
| Configuration | β | Single FET |
| Number of Pins | β | 3 |
| Category | β | Small Signal MOSFET |
| Manufacturer | β | onsemi (ON Semiconductor) |
| Lead Finish | β | [DATA_NEEDED: lead finish/plating] |
| Packaging | β | [DATA_NEEDED: packaging type] |