2N7002H6327XTSA2 vs 2N7002LT1G 对比
详细并排对比 2N7002H6327XTSA2 出自 Infineon 和 2N7002LT1G 出自 onsemi。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | 2N7002H6327XTSA2 | 2N7002LT1G |
|---|---|---|
| 品牌 | Infineon | onsemi |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.08 | $0.02 |
| 晶体管类型 | N-Channel MOSFET | — |
| Technology | OptiMOS (Planar) | MOSFET |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) | 300 mA (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| On-State Resistance (RDS(on)) | 3 ohm max @ VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| 工作温度范围 | -55C to +150C (Tj) | [DATA_NEEDED: operating temperature range] |
| 封装 | PG-SOT23 (SOT-23-3) | SOT-23-3 (TO-236) |
| 安装类型 | Surface Mount | Surface Mount |
| Channel Mode | Enhancement | Enhancement Mode |
| MSL 等级 | 1 (per JEDEC J-STD-020) | — |
| RoHS 状态 | Compliant | — |
| Lead-Free | Yes | — |
| Qualification | Industrial / Commercial Grade | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage VDSS | — | 60 V |
| Continuous Drain Current ID | — | 115 mA (Tc) |
| Power Dissipation PD | — | 225 mW (Ta) |
| Maximum RDS(on) | — | 7.5 ohm @ VGS = 5 V |
| Configuration | — | Single FET |
| 引脚数 | — | 3 |
| 分类 | — | Small Signal MOSFET |
| Manufacturer | — | onsemi (ON Semiconductor) |
| Lead Finish | — | [DATA_NEEDED: lead finish/plating] |
| Packaging | — | [DATA_NEEDED: packaging type] |