2N7002H6327XTSA2 vs 2N7002LT1G Vergleich
Detaillierter Direktvergleich von 2N7002H6327XTSA2 von Infineon und 2N7002LT1G von onsemi. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 2N7002H6327XTSA2 | 2N7002LT1G |
|---|---|---|
| Marke | Infineon | onsemi |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,08 | $0,02 |
| Transistortyp | N-Channel MOSFET | — |
| Technology | OptiMOS (Planar) | MOSFET |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) | 300 mA (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| On-State Resistance (RDS(on)) | 3 ohm max @ VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Betriebstemperaturbereich | -55C to +150C (Tj) | [DATA_NEEDED: operating temperature range] |
| Gehäuse | PG-SOT23 (SOT-23-3) | SOT-23-3 (TO-236) |
| Montageart | Surface Mount | Surface Mount |
| Channel Mode | Enhancement | Enhancement Mode |
| MSL-Level | 1 (per JEDEC J-STD-020) | — |
| RoHS-Status | Compliant | — |
| Lead-Free | Yes | — |
| Qualification | Industrial / Commercial Grade | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage VDSS | — | 60 V |
| Continuous Drain Current ID | — | 115 mA (Tc) |
| Power Dissipation PD | — | 225 mW (Ta) |
| Maximum RDS(on) | — | 7.5 ohm @ VGS = 5 V |
| Configuration | — | Single FET |
| Anzahl der Pins | — | 3 |
| Kategorie | — | Small Signal MOSFET |
| Manufacturer | — | onsemi (ON Semiconductor) |
| Lead Finish | — | [DATA_NEEDED: lead finish/plating] |
| Packaging | — | [DATA_NEEDED: packaging type] |