AUIRF7640S2TR vs IPB019N08N3GATMA1 Comparación
Comparación detallada lado a lado de AUIRF7640S2TR por Infineon y IPB019N08N3GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPB019N08N3GATMA1 - 80V 180A 1.9mΩ OptiMOS 3 N-MOSFET | Infineon
IPB019N08N3GATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | AUIRF7640S2TR | IPB019N08N3GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,18 | $2,74 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) @ TA=25C | 5.8 A | — |
| Continuous Drain Current (ID) @ TC=25C | 21 A | — |
| Power Dissipation (PD) @ TA=25C | 2.4 W | — |
| Power Dissipation (PD) @ TC=25C | 30 W | — |
| On-Resistance RDS(on) | 36 mΩ | — |
| Total Gate Charge (Qg) | 7.3 nC | — |
| Encapsulado | DirectFET SB (Surface Mount) | PG-TO263-7 (D2PAK-6, surface mount) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -40C to +150C [DATA_NEEDED: junction temp upper limit] | -55 °C to +175 °C |
| Technology | HEXFET Power MOSFET (Automotive Grade) | MOSFET (Metal Oxide) |
| Automotive Qualification | AEC-Q101 (Automotive Grade per datasheet) | — |
| Estado RoHS | Compliant [DATA_NEEDED: confirmed in datasheet] | Compliant |
| Primary Application | Automotive Class D audio amplifier output stage | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Drain-to-Source Voltage (Vdss) | — | 80 V |
| Continuous Drain Current (Id) @ Tc=25°C | — | 180 A |
| Power Dissipation (Pd) @ Tc=25°C | — | 300 W |
| On-Resistance RDS(on) Max @ VGS=10V | — | 1.9 mΩ |
| Gate Threshold Voltage (Vgs(th)) | — | 3.5 V |
| Drive Voltage (Rds On Max) | — | 6 V, 10 V |
| Total Gate Charge (Qg) @ VGS=10V | — | 206 nC |
| Input Capacitance (Ciss) | — | 14.2 nF |
| Output Capacitance (Coss) | — | 3.84 nF |
| Reverse Transfer Capacitance (Crss) | — | 3.84 nF |