AUIRF7640S2TR vs IPB019N08N3GATMA1 对比
详细并排对比 AUIRF7640S2TR 出自 Infineon 和 IPB019N08N3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | AUIRF7640S2TR | IPB019N08N3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.18 | $2.74 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) @ TA=25C | 5.8 A | — |
| Continuous Drain Current (ID) @ TC=25C | 21 A | — |
| Power Dissipation (PD) @ TA=25C | 2.4 W | — |
| Power Dissipation (PD) @ TC=25C | 30 W | — |
| On-Resistance RDS(on) | 36 mΩ | — |
| Total Gate Charge (Qg) | 7.3 nC | — |
| 封装 | DirectFET SB (Surface Mount) | PG-TO263-7 (D2PAK-6, surface mount) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -40C to +150C [DATA_NEEDED: junction temp upper limit] | -55 °C to +175 °C |
| Technology | HEXFET Power MOSFET (Automotive Grade) | MOSFET (Metal Oxide) |
| Automotive Qualification | AEC-Q101 (Automotive Grade per datasheet) | — |
| RoHS 状态 | Compliant [DATA_NEEDED: confirmed in datasheet] | Compliant |
| Primary Application | Automotive Class D audio amplifier output stage | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Drain-to-Source Voltage (Vdss) | — | 80 V |
| Continuous Drain Current (Id) @ Tc=25°C | — | 180 A |
| Power Dissipation (Pd) @ Tc=25°C | — | 300 W |
| On-Resistance RDS(on) Max @ VGS=10V | — | 1.9 mΩ |
| Gate Threshold Voltage (Vgs(th)) | — | 3.5 V |
| Drive Voltage (Rds On Max) | — | 6 V, 10 V |
| Total Gate Charge (Qg) @ VGS=10V | — | 206 nC |
| Input Capacitance (Ciss) | — | 14.2 nF |
| Output Capacitance (Coss) | — | 3.84 nF |
| Reverse Transfer Capacitance (Crss) | — | 3.84 nF |