AUIRF7640S2TR vs IPB019N08N3GATMA1 Comparison
Detailed side-by-side comparison of AUIRF7640S2TR by Infineon and IPB019N08N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
AUIRF7640S2TR
AUIRF7640S2TR - 60V 21A DirectFET MOSFET for Class D | Infineon
AUIRF7640S2TR β ActiveInfineon
IPB019N08N3GATMA1 - 80V 180A 1.9mΞ© OptiMOS 3 N-MOSFET | Infineon
IPB019N08N3GATMA1 β ActiveSpecification Comparison
| Parameter | AUIRF7640S2TR | IPB019N08N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.18 | $2.74 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) @ TA=25C | 5.8 A | β |
| Continuous Drain Current (ID) @ TC=25C | 21 A | β |
| Power Dissipation (PD) @ TA=25C | 2.4 W | β |
| Power Dissipation (PD) @ TC=25C | 30 W | β |
| On-Resistance RDS(on) | 36 mΞ© | β |
| Total Gate Charge (Qg) | 7.3 nC | β |
| Package | DirectFET SB (Surface Mount) | PG-TO263-7 (D2PAK-6, surface mount) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -40C to +150C [DATA_NEEDED: junction temp upper limit] | -55 Β°C to +175 Β°C |
| Technology | HEXFET Power MOSFET (Automotive Grade) | MOSFET (Metal Oxide) |
| Automotive Qualification | AEC-Q101 (Automotive Grade per datasheet) | β |
| RoHS Status | Compliant [DATA_NEEDED: confirmed in datasheet] | Compliant |
| Primary Application | Automotive Class D audio amplifier output stage | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 3 |
| Drain-to-Source Voltage (Vdss) | β | 80 V |
| Continuous Drain Current (Id) @ Tc=25Β°C | β | 180 A |
| Power Dissipation (Pd) @ Tc=25Β°C | β | 300 W |
| On-Resistance RDS(on) Max @ VGS=10V | β | 1.9 mΞ© |
| Gate Threshold Voltage (Vgs(th)) | β | 3.5 V |
| Drive Voltage (Rds On Max) | β | 6 V, 10 V |
| Total Gate Charge (Qg) @ VGS=10V | β | 206 nC |
| Input Capacitance (Ciss) | β | 14.2 nF |
| Output Capacitance (Coss) | β | 3.84 nF |
| Reverse Transfer Capacitance (Crss) | β | 3.84 nF |