BAT41 vs BAT43-R0 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BAT41 sa pamamagitan ng STMicroelectronics at BAT43-R0 sa pamamagitan ng Taiwan Semiconductor. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Taiwan Semiconductor
BAT43-R0 - 30V 200mA Schottky Diode DO-35 | Taiwan Semiconductor
BAT43-R0 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BAT41 | BAT43-R0 |
|---|---|---|
| Brand | STMicroelectronics | Taiwan Semiconductor |
| Kategorya | Diodes | Diodes |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Device Type | Small Signal Schottky Barrier Diode | — |
| Repetitive Peak Reverse Voltage (VRRM) | 100 V | 30 V |
| Average Forward Current (IF(AV)) | 100 mA | 200 mA |
| Packhaging | DO-35 (Glass), axial through-hole | DO-35 axial glass (through hole) |
| Technology | Metal-to-silicon Schottky with PN guard ring | — |
| Forward Voltage | [DATA_NEEDED: forward voltage at rated test current] | — |
| Reverse Leakage Current (IR) | [DATA_NEEDED: reverse leakage at rated VR] | — |
| Junction Capacitance | [DATA_NEEDED: junction capacitance value] | — |
| Reverse Recovery Time | Very low (fast switching, per ST datasheet) | — |
| Turn-On Voltage | Very low (low turn-on, per ST datasheet) | — |
| ESD Protection | Integrated guard-ring protection against excessive voltage such as ESD | Fast guard ring against excessive voltage (ESD) |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: operating junction temperature range] | — |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Configuration | Single diode | Single diode |
| Series Package Options | SOD-123 or SOD-523 (series variants); BAT41 base part in DO-35 | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS compliance statement] | Compliant |
| Diode Type | — | Small Signal Schottky Barrier |
| Maximum Forward Voltage (VF) | — | 1 V |
| Non-Repetitive Peak Forward Surge Current (IFSM) | — | 4 A |
| Power Dissipation | — | 200 mW |
| Junction Operating Temperature | — | -65C to +125C |
| Reverse Recovery | — | Fast switching (Schottky, majority carrier) |
| Forward Voltage Turn-On | — | Very low turn-on voltage |
| Capacitance (Cj) | — | [DATA_NEEDED: junction capacitance] |
| Leakage Current (IR) | — | [DATA_NEEDED: reverse leakage current] |
| Packaging Type | — | [DATA_NEEDED: tape/reel or bulk option] |