BAT41 vs BAT43-R0 Perbandingan

Perbandingan bersamaan detil BAT41 dari STMicroelectronics dan BAT43-R0 dari Taiwan Semiconductor. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BAT41 BAT43-R0
Merek STMicroelectronics Taiwan Semiconductor
Kategori Diodes Diodes
Status Lingkungan Hidup Aktif Aktif
Device Type Small Signal Schottky Barrier Diode —
Repetitive Peak Reverse Voltage (VRRM) 100 V 30 V
Average Forward Current (IF(AV)) 100 mA 200 mA
Paket DO-35 (Glass), axial through-hole DO-35 axial glass (through hole)
Technology Metal-to-silicon Schottky with PN guard ring —
Forward Voltage [DATA_NEEDED: forward voltage at rated test current] —
Reverse Leakage Current (IR) [DATA_NEEDED: reverse leakage at rated VR] —
Junction Capacitance [DATA_NEEDED: junction capacitance value] —
Reverse Recovery Time Very low (fast switching, per ST datasheet) —
Turn-On Voltage Very low (low turn-on, per ST datasheet) —
ESD Protection Integrated guard-ring protection against excessive voltage such as ESD Fast guard ring against excessive voltage (ESD)
Rentang Suhu Kerja [DATA_NEEDED: operating junction temperature range] —
Tipe Mounting Through Hole Through Hole
Configuration Single diode Single diode
Series Package Options SOD-123 or SOD-523 (series variants); BAT41 base part in DO-35 —
Status RoHS [DATA_NEEDED: RoHS compliance statement] Compliant
Diode Type — Small Signal Schottky Barrier
Maximum Forward Voltage (VF) — 1 V
Non-Repetitive Peak Forward Surge Current (IFSM) — 4 A
Power Dissipation — 200 mW
Junction Operating Temperature — -65C to +125C
Reverse Recovery — Fast switching (Schottky, majority carrier)
Forward Voltage Turn-On — Very low turn-on voltage
Capacitance (Cj) — [DATA_NEEDED: junction capacitance]
Leakage Current (IR) — [DATA_NEEDED: reverse leakage current]
Packaging Type — [DATA_NEEDED: tape/reel or bulk option]

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