BSS123NH6327XTSA1 vs 2N7002LT1G Comparación
Comparación detallada lado a lado de BSS123NH6327XTSA1 por Infineon y 2N7002LT1G por onsemi. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSS123NH6327XTSA1 | 2N7002LT1G |
|---|---|---|
| Marca | Infineon | onsemi |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,09 | $0,02 |
| Manufacturer | Infineon Technologies | onsemi (ON Semiconductor) |
| Part Number | BSS123NH6327XTSA1 | — |
| Part Status | Active | — |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) | 190 mA (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| RDS(on) Max | 6 Ω @ VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical and max VGS(th)] | — |
| Gate-Source Voltage Max (VGS) | ±20 V | — |
| Encapsulado | PG-SOT23 (SOT-23-3) | SOT-23-3 (TO-236) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55 °C to +150 °C (junction) | [DATA_NEEDED: operating temperature range] |
| Qualification | AEC-Q101 (automotive) | — |
| RoHS Compliance | Yes (Pb-free lead plating) | — |
| Nivel MSL | 1 (per JEDEC J-STD-020) | — |
| Polarity | — | N-Channel |
| Channel Mode | — | Enhancement Mode |
| Drain-Source Voltage VDSS | — | 60 V |
| Continuous Drain Current ID | — | 115 mA (Tc) |
| Power Dissipation PD | — | 225 mW (Ta) |
| Maximum RDS(on) | — | 7.5 ohm @ VGS = 5 V |
| Configuration | — | Single FET |
| Número de pines | — | 3 |
| Categoría | — | Small Signal MOSFET |
| Technology | — | MOSFET |
| Lead Finish | — | [DATA_NEEDED: lead finish/plating] |
| Packaging | — | [DATA_NEEDED: packaging type] |