BSS123NH6327XTSA1 vs 2N7002LT1G Comparison

Detailed side-by-side comparison of BSS123NH6327XTSA1 by Infineon and 2N7002LT1G by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSS123NH6327XTSA1 BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 βœ“ Active
onsemi
2N7002LT1G 2N7002LT1G - 60V N-Channel MOSFET SOT-23 | onsemi

2N7002LT1G - 60V N-Channel MOSFET SOT-23 | onsemi

2N7002LT1G βœ“ Active

Specification Comparison

Parameter BSS123NH6327XTSA1 2N7002LT1G
Brand Infineon onsemi
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.09 $0.02
Manufacturer Infineon Technologies onsemi (ON Semiconductor)
Part Number BSS123NH6327XTSA1 β€”
Part Status Active β€”
FET Type N-Channel, Enhancement Mode β€”
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) 190 mA (Ta) β€”
Power Dissipation (PD) 500 mW (Ta) β€”
RDS(on) Max 6 Ξ© @ VGS = 10 V β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical and max VGS(th)] β€”
Gate-Source Voltage Max (VGS) Β±20 V β€”
Package PG-SOT23 (SOT-23-3) SOT-23-3 (TO-236)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 Β°C to +150 Β°C (junction) [DATA_NEEDED: operating temperature range]
Qualification AEC-Q101 (automotive) β€”
RoHS Compliance Yes (Pb-free lead plating) β€”
MSL Level 1 (per JEDEC J-STD-020) β€”
Polarity β€” N-Channel
Channel Mode β€” Enhancement Mode
Drain-Source Voltage VDSS β€” 60 V
Continuous Drain Current ID β€” 115 mA (Tc)
Power Dissipation PD β€” 225 mW (Ta)
Maximum RDS(on) β€” 7.5 ohm @ VGS = 5 V
Configuration β€” Single FET
Number of Pins β€” 3
Category β€” Small Signal MOSFET
Technology β€” MOSFET
Lead Finish β€” [DATA_NEEDED: lead finish/plating]
Packaging β€” [DATA_NEEDED: packaging type]

Datasheets & Resources

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