BSS123NH6327XTSA1 vs 2N7002LT1G 对比

详细并排对比 BSS123NH6327XTSA1 出自 Infineon 和 2N7002LT1G 出自 onsemi。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSS123NH6327XTSA1 BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 ✓ 量产中
onsemi
2N7002LT1G 2N7002LT1G - 60V N-Channel MOSFET SOT-23 | onsemi

2N7002LT1G - 60V N-Channel MOSFET SOT-23 | onsemi

2N7002LT1G ✓ 量产中

规格对比

参数 BSS123NH6327XTSA1 2N7002LT1G
品牌 Infineon onsemi
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.09 $0.02
Manufacturer Infineon Technologies onsemi (ON Semiconductor)
Part Number BSS123NH6327XTSA1 —
Part Status Active —
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) 190 mA (Ta) —
Power Dissipation (PD) 500 mW (Ta) —
RDS(on) Max 6 Ω @ VGS = 10 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical and max VGS(th)] —
Gate-Source Voltage Max (VGS) ±20 V —
封装 PG-SOT23 (SOT-23-3) SOT-23-3 (TO-236)
安装类型 Surface Mount Surface Mount
工作温度范围 -55 °C to +150 °C (junction) [DATA_NEEDED: operating temperature range]
Qualification AEC-Q101 (automotive) —
RoHS Compliance Yes (Pb-free lead plating) —
MSL 等级 1 (per JEDEC J-STD-020) —
Polarity — N-Channel
Channel Mode — Enhancement Mode
Drain-Source Voltage VDSS — 60 V
Continuous Drain Current ID — 115 mA (Tc)
Power Dissipation PD — 225 mW (Ta)
Maximum RDS(on) — 7.5 ohm @ VGS = 5 V
Configuration — Single FET
引脚数 — 3
分类 — Small Signal MOSFET
Technology — MOSFET
Lead Finish — [DATA_NEEDED: lead finish/plating]
Packaging — [DATA_NEEDED: packaging type]

数据手册与资源

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