BSS308PEH6327XTSA1 vs BSL316CH6327XTSA1 Comparación
Comparación detallada lado a lado de BSS308PEH6327XTSA1 por Infineon y BSL316CH6327XTSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSS308PEH6327XTSA1 - P-Ch -30V -2A OptiMOS MOSFET | Infineon | SOT-23
BSS308PEH6327XTSA1 ✓ Activo
Comparación de especificaciones
| Parámetro | BSS308PEH6327XTSA1 | BSL316CH6327XTSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,11 | $0,22 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS P (small signal / small power MOSFET) | OptiMOS small-signal complementary MOSFET |
| Tipo de transistor | P-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | -30 V | 30 V |
| Continuous Drain Current (ID) | -2 A (Ta) | — |
| RDS(on) Max | 80 mΩ at VGS = -10 V | — |
| Gate-Source Voltage (VGS) Max | +/-20 V | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| Rango de temperatura de funcionamiento | -55 °C to +150 °C | — |
| Encapsulado / Carcasa | PG-SOT23 (SOT-23-3) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Número de pines | 3 | — |
| Qualification | AEC-Q101 Automotive | — |
| Estado RoHS | Compliant | Compliant |
| Packaging | Tape & Reel (T/R) | — |
| Standard Reel Quantity | 3000 pcs | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) min/typ/max] |
| Configuration | — | Complementary pair (1 N-channel + 1 P-channel in one package) |
| Continuous Drain Current (N-channel ID) | — | 1.4 A |
| Continuous Drain Current (P-channel ID) | — | 1.5 A |
| Total Power Dissipation (Ptot) | — | 500 mW |
| Encapsulado | — | PG-TSOP6-6 (TSOP6, 6-pin) |
| Temperatura de funcionamiento | — | -55C to +150C (junction) |
| Technology | — | OptiMOS low-voltage MOSFET |
| Channel Type | — | N-channel + P-channel (dual) |
| Recuento de pines | — | 6 |
| Nivel MSL | — | [DATA_NEEDED: MSL level] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] |