BSS308PEH6327XTSA1 vs BSL316CH6327XTSA1 对比

详细并排对比 BSS308PEH6327XTSA1 出自 Infineon 和 BSL316CH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSL316CH6327XTSA1 BSL316CH6327XTSA1 - 30V 1.5A Complementary MOSFET | Infineon

BSL316CH6327XTSA1 - 30V 1.5A Complementary MOSFET | Infineon

BSL316CH6327XTSA1 ✓ 量产中

规格对比

参数 BSS308PEH6327XTSA1 BSL316CH6327XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.11 $0.22
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS P (small signal / small power MOSFET) OptiMOS small-signal complementary MOSFET
晶体管类型 P-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) -30 V 30 V
Continuous Drain Current (ID) -2 A (Ta) —
RDS(on) Max 80 mΩ at VGS = -10 V —
Gate-Source Voltage (VGS) Max +/-20 V —
Power Dissipation (PD) 500 mW (Ta) —
工作温度范围 -55 °C to +150 °C —
封装 / 外壳 PG-SOT23 (SOT-23-3) —
安装类型 Surface Mount Surface Mount
引脚数 3 —
Qualification AEC-Q101 Automotive —
RoHS 状态 Compliant Compliant
Packaging Tape & Reel (T/R) —
Standard Reel Quantity 3000 pcs —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th) min/typ/max]
Configuration — Complementary pair (1 N-channel + 1 P-channel in one package)
Continuous Drain Current (N-channel ID) — 1.4 A
Continuous Drain Current (P-channel ID) — 1.5 A
Total Power Dissipation (Ptot) — 500 mW
封装 — PG-TSOP6-6 (TSOP6, 6-pin)
工作温度 — -55C to +150C (junction)
Technology — OptiMOS low-voltage MOSFET
Channel Type — N-channel + P-channel (dual)
引脚数量 — 6
MSL 等级 — [DATA_NEEDED: MSL level]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V/4.5V]

数据手册与资源

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