IAUC120N06S5L011ATMA1 vs ISC080N10NM6ATMA1 Comparación
Comparación detallada lado a lado de IAUC120N06S5L011ATMA1 por Infineon y ISC080N10NM6ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC120N06S5L011ATMA1 - 60V 1.1mOhm 310A OptiMOS 5 MOSFET | Infineon
IAUC120N06S5L011ATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | IAUC120N06S5L011ATMA1 | ISC080N10NM6ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,10 | $1,05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 60 V (S5 generation) | OptiMOS™ 6 100V |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (V_DS) | 60 V | — |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | — |
| Continuous Drain Current (I_D) | 310 A (Tj), 120 A marketing | — |
| R_DS(on) max | [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V] | — |
| Power Dissipation (P_D) | 188 W at T_C = 25 °C | — |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | — |
| Encapsulado | PG-TDSON-8-53 (TDSON-8 FL, 5 mm × 6 mm) | PG-TDSON-8 FL (TDSON EP) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, per datasheet) |
| Avalanche Energy Rated | Yes (EAS) | — |
| Drain-Source Voltage (VDS) Max | — | 100 V |
| Continuous Drain Current (ID) at Ta | — | 13 A |
| Continuous Drain Current (ID) at Tc | — | 75 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 100 W |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | — | 8.05 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 3.3 V at 36 µA |
| Rango de temperatura de funcionamiento | — | -55°C to +175°C (TJ max, per datasheet) |
| Lead-Free | — | Yes |
| Sin halógenos | — | Yes |
| Qualification | — | Industrial grade (per Infineon OptiMOS 6 100V family) |