IAUC120N06S5L011ATMA1 vs ISC080N10NM6ATMA1 Comparison

Detailed side-by-side comparison of IAUC120N06S5L011ATMA1 by Infineon and ISC080N10NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IAUC120N06S5L011ATMA1 ISC080N10NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 60 V (S5 generation) OptiMOS™ 6 100V
Polarity / Channel Type N-Channel N-Channel
Drain-Source Voltage (V_DS) 60 V —
Gate-Source Voltage (V_GS) [DATA_NEEDED: max V_GS rating] —
Continuous Drain Current (I_D) 310 A (Tj), 120 A marketing —
R_DS(on) max [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V] —
Power Dissipation (P_D) 188 W at T_C = 25 °C —
Operating Junction Temperature -55 °C to +175 °C —
Package PG-TDSON-8-53 (TDSON-8 FL, 5 mm × 6 mm) PG-TDSON-8 FL (TDSON EP)
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
RoHS Status Compliant Compliant
MSL Level 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020, per datasheet)
Avalanche Energy Rated Yes (EAS) —
Drain-Source Voltage (VDS) Max — 100 V
Continuous Drain Current (ID) at Ta — 13 A
Continuous Drain Current (ID) at Tc — 75 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 100 W
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A — 8.05 mΩ
Gate Threshold Voltage (VGS(th)) — 3.3 V at 36 µA
Operating Temperature Range — -55°C to +175°C (TJ max, per datasheet)
Lead-Free — Yes
Halogen Free — Yes
Qualification — Industrial grade (per Infineon OptiMOS 6 100V family)

Datasheets & Resources

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