IAUC60N04S6N031HATMA1 vs IAUT300N08S5N012ATMA2 Comparación
Comparación detallada lado a lado de IAUC60N04S6N031HATMA1 por Infineon y IAUT300N08S5N012ATMA2 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon
IAUC60N04S6N031HATMA1 ✓ ActivoInfineon
IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon
IAUT300N08S5N012ATMA2 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC60N04S6N031HATMA1 | IAUT300N08S5N012ATMA2 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,95 | $2,20 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | IAUC (Integrated Automotive Half-Bridge) | — |
| Process Technology | OptiMOS 6 40V | — |
| Configuration | Half-Bridge (2 N-Channel MOSFETs) | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, Tj) | 60 A | — |
| Power Dissipation (P_D, Tc=25C) | 75 W | — |
| R_DS(on) at VGS=10V | 3.1 mΩ | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Rango de temperatura de funcionamiento | -55 °C to +175 °C (Tj) | -55 °C to +175 °C (TJ) |
| Encapsulado | PG-TDSON-8-56 (5 mm x 6 mm) | PG-HSOF-8-1 (8-pin HSOF with drain tab) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 8 | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Estado RoHS | Compliant | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Product Family | — | OptiMOS™-5 80 V |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 300 A |
| Pulsed Drain Current (IDM) | — | 1200 A (per datasheet, typical) |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.2 mΩ |
| Maximum Power Dissipation (PD, Tc) | — | 375 W |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| RoHS Compliance | — | Compliant |