IAUC60N04S6N031HATMA1 vs IAUT300N08S5N012ATMA2 对比

详细并排对比 IAUC60N04S6N031HATMA1 出自 Infineon 和 IAUT300N08S5N012ATMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC60N04S6N031HATMA1 IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon

IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon

IAUC60N04S6N031HATMA1 ✓ 量产中
Infineon
IAUT300N08S5N012ATMA2 IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 ✓ 量产中

规格对比

参数 IAUC60N04S6N031HATMA1 IAUT300N08S5N012ATMA2
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.95 $2.20
Manufacturer Infineon Technologies Infineon Technologies
Part Family IAUC (Integrated Automotive Half-Bridge) —
Process Technology OptiMOS 6 40V —
Configuration Half-Bridge (2 N-Channel MOSFETs) —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D, Tj) 60 A —
Power Dissipation (P_D, Tc=25C) 75 W —
R_DS(on) at VGS=10V 3.1 mΩ —
Gate-Source Voltage (V_GS) max [DATA_NEEDED: V_GS max rating] —
工作温度范围 -55 °C to +175 °C (Tj) -55 °C to +175 °C (TJ)
封装 PG-TDSON-8-56 (5 mm x 6 mm) PG-HSOF-8-1 (8-pin HSOF with drain tab)
安装类型 Surface Mount Surface Mount
引脚数量 8 —
Automotive Qualification AEC-Q101 AEC-Q101 qualified
RoHS 状态 Compliant —
MSL 等级 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Product Family — OptiMOS™-5 80 V
晶体管类型 — N-Channel MOSFET
Drain-to-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID, Tc=25°C) — 300 A
Pulsed Drain Current (IDM) — 1200 A (per datasheet, typical)
On-Resistance RDS(on) max @ VGS=10V — 1.2 mΩ
Maximum Power Dissipation (PD, Tc) — 375 W
Gate-to-Source Voltage (VGS) — ±20 V
RoHS Compliance — Compliant

数据手册与资源

浏览全部产品 创建 BOM 获取报价