IGLT65R035D2ATMA1 vs IDL04G65C5XUMA2 Comparación
Comparación detallada lado a lado de IGLT65R035D2ATMA1 por Infineon y IDL04G65C5XUMA2 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IGLT65R035D2ATMA1 | IDL04G65C5XUMA2 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | Diodes |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $5,10 | $0,92 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN™ G5 TOLT | CoolSiC™ Schottky Diode Generation 5 |
| Tipo de transistor | N-Channel enhancement-mode GaN HEMT | — |
| Drain-Source Voltage (Vdss) | 650 V | — |
| Continuous Drain Current (Id) at Tc | 47 A | — |
| Maximum Power Dissipation (Pd) at Tc | 154 W | — |
| On-Resistance (Rds(on)) | [DATA_NEEDED: typical Rds(on) in mohm] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: typical Vgs(th)] | — |
| Input Capacitance (Ciss) at Vds=400V | 540 pF | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: Tj min/max] | — |
| Encapsulado | PG-HDSOP-16-8 (top-side cooled) | PG-VSON-4 (DPAK real2pin) Surface Mount |
| Tipo de montaje | Surface Mount | Surface Mount, Tape & Reel |
| Cooling Configuration | Top-side cooled (TOLT) | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | — |
| Estado RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Production Wafer Size | 200 mm (8 inch) | — |
| Diode Type | — | Silicon Carbide (SiC) Schottky |
| Repetitive Peak Reverse Voltage (V_RRM) | — | 650 V |
| Continuous Forward Current (I_F(AV)) | — | 4 A |
| Total Capacitive Charge (Q_C) | — | 7 nC (typical) |
| Forward Voltage (V_F) | — | 1.7 V at 4 A (typical, per datasheet) |
| Reverse Leakage Current (I_R) | — | 70 µA at 650 V |
| Junction Capacitance (C_J) | — | 130 pF at 1 V, 1 MHz |
| Reverse Recovery Time (t_rr) | — | 0 ns (Schottky, no minority-carrier storage) |
| Temperatura de unión de funcionamiento | — | -55°C to +175°C |
| Recuento de pines | — | 4 (with exposed thermal pad) |
| RoHS / REACH | — | RoHS Compliant (per Infineon product page) |