IGLT65R035D2ATMA1 vs IDL04G65C5XUMA2 비교

다음의 상세 나란히 비교: IGLT65R035D2ATMA1 제조: Infineon 및 IDL04G65C5XUMA2 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IDL04G65C5XUMA2 IDL04G65C5XUMA2 - 650V 4A SiC Schottky Diode | Infineon

IDL04G65C5XUMA2 - 650V 4A SiC Schottky Diode | Infineon

IDL04G65C5XUMA2 ✓ 활성

사양 비교

파라미터 IGLT65R035D2ATMA1 IDL04G65C5XUMA2
브랜드 Infineon Infineon
카테고리 MOSFETs Diodes
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $5.10 $0.92
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolGaN™ G5 TOLT CoolSiC™ Schottky Diode Generation 5
트랜지스터 유형 N-Channel enhancement-mode GaN HEMT —
Drain-Source Voltage (Vdss) 650 V —
Continuous Drain Current (Id) at Tc 47 A —
Maximum Power Dissipation (Pd) at Tc 154 W —
On-Resistance (Rds(on)) [DATA_NEEDED: typical Rds(on) in mohm] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: typical Vgs(th)] —
Input Capacitance (Ciss) at Vds=400V 540 pF —
동작 온도 범위 [DATA_NEEDED: Tj min/max] —
패키지 PG-HDSOP-16-8 (top-side cooled) PG-VSON-4 (DPAK real2pin) Surface Mount
실장 유형 Surface Mount Surface Mount, Tape & Reel
Cooling Configuration Top-side cooled (TOLT) —
MSL 레벨 [DATA_NEEDED: MSL rating] —
RoHS 상태 Compliant —
Lead-Free Yes —
Production Wafer Size 200 mm (8 inch) —
Diode Type — Silicon Carbide (SiC) Schottky
Repetitive Peak Reverse Voltage (V_RRM) — 650 V
Continuous Forward Current (I_F(AV)) — 4 A
Total Capacitive Charge (Q_C) — 7 nC (typical)
Forward Voltage (V_F) — 1.7 V at 4 A (typical, per datasheet)
Reverse Leakage Current (I_R) — 70 µA at 650 V
Junction Capacitance (C_J) — 130 pF at 1 V, 1 MHz
Reverse Recovery Time (t_rr) — 0 ns (Schottky, no minority-carrier storage)
동작 접합 온도 — -55°C to +175°C
핀 수 — 4 (with exposed thermal pad)
RoHS / REACH — RoHS Compliant (per Infineon product page)

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