IGLT65R035D2ATMA1 vs IDL04G65C5XUMA2 对比

详细并排对比 IGLT65R035D2ATMA1 出自 Infineon 和 IDL04G65C5XUMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IGLT65R035D2ATMA1 IGLT65R035D2ATMA1 - 650V 47A CoolGaN™ G5 Transistor | Infineon

IGLT65R035D2ATMA1 - 650V 47A CoolGaN™ G5 Transistor | Infineon

IGLT65R035D2ATMA1 ✓ 量产中
Infineon
IDL04G65C5XUMA2 IDL04G65C5XUMA2 - 650V 4A SiC Schottky Diode | Infineon

IDL04G65C5XUMA2 - 650V 4A SiC Schottky Diode | Infineon

IDL04G65C5XUMA2 ✓ 量产中

规格对比

参数 IGLT65R035D2ATMA1 IDL04G65C5XUMA2
品牌 Infineon Infineon
分类 MOSFETs Diodes
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $5.10 $0.92
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolGaN™ G5 TOLT CoolSiC™ Schottky Diode Generation 5
晶体管类型 N-Channel enhancement-mode GaN HEMT —
Drain-Source Voltage (Vdss) 650 V —
Continuous Drain Current (Id) at Tc 47 A —
Maximum Power Dissipation (Pd) at Tc 154 W —
On-Resistance (Rds(on)) [DATA_NEEDED: typical Rds(on) in mohm] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: typical Vgs(th)] —
Input Capacitance (Ciss) at Vds=400V 540 pF —
工作温度范围 [DATA_NEEDED: Tj min/max] —
封装 PG-HDSOP-16-8 (top-side cooled) PG-VSON-4 (DPAK real2pin) Surface Mount
安装类型 Surface Mount Surface Mount, Tape & Reel
Cooling Configuration Top-side cooled (TOLT) —
MSL 等级 [DATA_NEEDED: MSL rating] —
RoHS 状态 Compliant —
Lead-Free Yes —
Production Wafer Size 200 mm (8 inch) —
Diode Type — Silicon Carbide (SiC) Schottky
Repetitive Peak Reverse Voltage (V_RRM) — 650 V
Continuous Forward Current (I_F(AV)) — 4 A
Total Capacitive Charge (Q_C) — 7 nC (typical)
Forward Voltage (V_F) — 1.7 V at 4 A (typical, per datasheet)
Reverse Leakage Current (I_R) — 70 µA at 650 V
Junction Capacitance (C_J) — 130 pF at 1 V, 1 MHz
Reverse Recovery Time (t_rr) — 0 ns (Schottky, no minority-carrier storage)
工作结温 — -55°C to +175°C
引脚数量 — 4 (with exposed thermal pad)
RoHS / REACH — RoHS Compliant (per Infineon product page)

数据手册与资源

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