IPD90N06S404ATMA2 vs IPD068N10N3GATMA1 Comparación
Comparación detallada lado a lado de IPD90N06S404ATMA2 por Infineon y IPD068N10N3GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPD068N10N3GATMA1 - 100V 90A OptiMOS 3 N-Channel MOSFET | Infineon
IPD068N10N3GATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPD90N06S404ATMA2 | IPD068N10N3GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,72 | $0,65 |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 60 V | 100 V |
| Continuous Drain Current (ID, Tc) | 90 A | — |
| Power Dissipation (PD, Tc) | 150 W | — |
| On-Resistance (RDS(on)) | 3.8 mΩ (typ) at VGS = 10 V | — |
| Encapsulado | PG-TO252-3-11 (DPAK), 3-pin surface mount | PG-TO252-3 (DPAK, 2 leads + tab) |
| Operating Temperature (TJ max) | 175 °C | — |
| Peak Reflow Temperature | 260 °C (MSL1) | — |
| Avalanche Rating | 100% Avalanche Tested | — |
| Automotive Qualification | AEC-Q101 | — |
| Technology | OptiMOS | OptiMOS 3 (N-Channel, Enhancement Mode) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant (Green Product) | Compliant |
| Nivel MSL | MSL1 | 1 |
| Polarity | Single N-Channel | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPD068N10N3GATMA1 |
| Continuous Drain Current (ID) at Tc | — | 90 A |
| On-Resistance RDS(on) max | — | 6.8 mOhm |
| Power Dissipation (PD) at Tc | — | 150 W |
| Gate Threshold Voltage VGS(th) | — | 2.0 V to 4.0 V (typical) |
| Temperatura de unión de funcionamiento | — | -55 C to +175 C |
| Channel Type | — | N-Channel |
| Configuration | — | Single |
| Packing | — | Tape & Reel (T/R) |
| Qualification | — | Industrial (non-automotive) |