IPD90N06S404ATMA2 vs IPD068N10N3GATMA1 对比

详细并排对比 IPD90N06S404ATMA2 出自 Infineon 和 IPD068N10N3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPD90N06S404ATMA2 IPD90N06S404ATMA2 - 60V 90A N-Ch OptiMOS MOSFET | Infineon

IPD90N06S404ATMA2 - 60V 90A N-Ch OptiMOS MOSFET | Infineon

IPD90N06S404ATMA2 ✓ 量产中

规格对比

参数 IPD90N06S404ATMA2 IPD068N10N3GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.72 $0.65
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 60 V 100 V
Continuous Drain Current (ID, Tc) 90 A —
Power Dissipation (PD, Tc) 150 W —
On-Resistance (RDS(on)) 3.8 mΩ (typ) at VGS = 10 V —
封装 PG-TO252-3-11 (DPAK), 3-pin surface mount PG-TO252-3 (DPAK, 2 leads + tab)
Operating Temperature (TJ max) 175 °C —
Peak Reflow Temperature 260 °C (MSL1) —
Avalanche Rating 100% Avalanche Tested —
Automotive Qualification AEC-Q101 —
Technology OptiMOS OptiMOS 3 (N-Channel, Enhancement Mode)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant (Green Product) Compliant
MSL 等级 MSL1 1
Polarity Single N-Channel —
Manufacturer — Infineon Technologies
Part Number — IPD068N10N3GATMA1
Continuous Drain Current (ID) at Tc — 90 A
On-Resistance RDS(on) max — 6.8 mOhm
Power Dissipation (PD) at Tc — 150 W
Gate Threshold Voltage VGS(th) — 2.0 V to 4.0 V (typical)
工作结温 — -55 C to +175 C
Channel Type — N-Channel
Configuration — Single
Packing — Tape & Reel (T/R)
Qualification — Industrial (non-automotive)

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