IPN95R1K2P7ATMA1 vs IPN80R4K5P7ATMA1 Comparación
Comparación detallada lado a lado de IPN95R1K2P7ATMA1 por Infineon y IPN80R4K5P7ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPN80R4K5P7ATMA1 - 800V 1.5A CoolMOS P7 N-Channel MOSFET | Infineon
IPN80R4K5P7ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPN95R1K2P7ATMA1 | IPN80R4K5P7ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,36 | $0,30 |
| FET Type | N-Channel | N-Channel |
| Technology | CoolMOS P7 (Super Junction) | CoolMOS Superjunction (SJ) |
| Drain-to-Source Voltage (V_DSS) | 950 V | — |
| Continuous Drain Current (I_D) at T_C | 6 A | — |
| Maximum On-Resistance R_DS(on) at V_GS=10V | 1200 mOhm (1.2 Ohm) | — |
| Gate Drive Voltage (max R_DS(on)) | 10 V | — |
| Power Dissipation (T_C) | 7 W | — |
| Encapsulado | SOT-223-3 (PG-SOT223) | PG-SOT223 (surface mount, 3-pin + tab) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 3 (2 + Tab) | — |
| Series | CoolMOS P7 | — |
| Rango de temperatura de funcionamiento | -55C to +150C | — |
| Packaging | Tape & Reel | — |
| Estado RoHS | Compliant | Compliant |
| Part Status | Active | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolMOS P7 |
| Drain-Source Voltage (VDS) | — | 800 V |
| Continuous Drain Current (ID, Tc) | — | 1.5 A |
| Power Dissipation (Pd, Tc) | — | 6 W |
| On-Resistance (RDS(on), VGS=10V) | — | 4.5 ohm max |
| Operating Mode | — | Enhancement-mode |
| Grade | — | Industrial |
| Application | — | Low-power SMPS, flyback converters, LED drivers |
| Reel / Tape Packaging | — | Tape & Reel (T/R) |