IPN95R1K2P7ATMA1 vs IPN80R4K5P7ATMA1 Comparison

Detailed side-by-side comparison of IPN95R1K2P7ATMA1 by Infineon and IPN80R4K5P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPN95R1K2P7ATMA1 IPN95R1K2P7ATMA1 - 950V CoolMOS P7 N-Channel MOSFET | Infineon

IPN95R1K2P7ATMA1 - 950V CoolMOS P7 N-Channel MOSFET | Infineon

IPN95R1K2P7ATMA1 βœ“ Active
Infineon
IPN80R4K5P7ATMA1

IPN80R4K5P7ATMA1 - 800V 1.5A CoolMOS P7 N-Channel MOSFET | Infineon

IPN80R4K5P7ATMA1 βœ“ Active

Specification Comparison

Parameter IPN95R1K2P7ATMA1 IPN80R4K5P7ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.36 $0.30
FET Type N-Channel N-Channel
Technology CoolMOS P7 (Super Junction) CoolMOS Superjunction (SJ)
Drain-to-Source Voltage (V_DSS) 950 V β€”
Continuous Drain Current (I_D) at T_C 6 A β€”
Maximum On-Resistance R_DS(on) at V_GS=10V 1200 mOhm (1.2 Ohm) β€”
Gate Drive Voltage (max R_DS(on)) 10 V β€”
Power Dissipation (T_C) 7 W β€”
Package SOT-223-3 (PG-SOT223) PG-SOT223 (surface mount, 3-pin + tab)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (2 + Tab) β€”
Series CoolMOS P7 β€”
Operating Temperature Range -55C to +150C β€”
Packaging Tape & Reel β€”
RoHS Status Compliant Compliant
Part Status Active β€”
Manufacturer β€” Infineon Technologies
Product Family β€” CoolMOS P7
Drain-Source Voltage (VDS) β€” 800 V
Continuous Drain Current (ID, Tc) β€” 1.5 A
Power Dissipation (Pd, Tc) β€” 6 W
On-Resistance (RDS(on), VGS=10V) β€” 4.5 ohm max
Operating Mode β€” Enhancement-mode
Grade β€” Industrial
Application β€” Low-power SMPS, flyback converters, LED drivers
Reel / Tape Packaging β€” Tape & Reel (T/R)

Datasheets & Resources

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