IPN95R1K2P7ATMA1 vs IPN80R4K5P7ATMA1 Vergleich
Detaillierter Direktvergleich von IPN95R1K2P7ATMA1 von Infineon und IPN80R4K5P7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPN80R4K5P7ATMA1 - 800V 1.5A CoolMOS P7 N-Channel MOSFET | Infineon
IPN80R4K5P7ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPN95R1K2P7ATMA1 | IPN80R4K5P7ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,36 | $0,30 |
| FET Type | N-Channel | N-Channel |
| Technology | CoolMOS P7 (Super Junction) | CoolMOS Superjunction (SJ) |
| Drain-to-Source Voltage (V_DSS) | 950 V | — |
| Continuous Drain Current (I_D) at T_C | 6 A | — |
| Maximum On-Resistance R_DS(on) at V_GS=10V | 1200 mOhm (1.2 Ohm) | — |
| Gate Drive Voltage (max R_DS(on)) | 10 V | — |
| Power Dissipation (T_C) | 7 W | — |
| Gehäuse | SOT-223-3 (PG-SOT223) | PG-SOT223 (surface mount, 3-pin + tab) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 (2 + Tab) | — |
| Series | CoolMOS P7 | — |
| Betriebstemperaturbereich | -55C to +150C | — |
| Packaging | Tape & Reel | — |
| RoHS-Status | Compliant | Compliant |
| Part Status | Active | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolMOS P7 |
| Drain-Source Voltage (VDS) | — | 800 V |
| Continuous Drain Current (ID, Tc) | — | 1.5 A |
| Power Dissipation (Pd, Tc) | — | 6 W |
| On-Resistance (RDS(on), VGS=10V) | — | 4.5 ohm max |
| Operating Mode | — | Enhancement-mode |
| Grade | — | Industrial |
| Application | — | Low-power SMPS, flyback converters, LED drivers |
| Reel / Tape Packaging | — | Tape & Reel (T/R) |