IPN95R1K2P7ATMA1 vs STF13N95K3 Comparación
Comparación detallada lado a lado de IPN95R1K2P7ATMA1 por Infineon y STF13N95K3 por STMicroelectronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
STMicroelectronics
STF13N95K3 - 13A, 950V N-Channel Power MOSFET | STMicroelectronics
STF13N95K3 ✓ ActivoComparación de especificaciones
| Parámetro | IPN95R1K2P7ATMA1 | STF13N95K3 |
|---|---|---|
| Marca | Infineon | STMicroelectronics |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,36 | $1,85 |
| FET Type | N-Channel | — |
| Technology | CoolMOS P7 (Super Junction) | — |
| Drain-to-Source Voltage (V_DSS) | 950 V | — |
| Continuous Drain Current (I_D) at T_C | 6 A | — |
| Maximum On-Resistance R_DS(on) at V_GS=10V | 1200 mOhm (1.2 Ohm) | — |
| Gate Drive Voltage (max R_DS(on)) | 10 V | — |
| Power Dissipation (T_C) | 7 W | — |
| Encapsulado | SOT-223-3 (PG-SOT223) | TO-220FP |
| Tipo de montaje | Surface Mount | Through Hole |
| Recuento de pines | 3 (2 + Tab) | — |
| Series | CoolMOS P7 | — |
| Rango de temperatura de funcionamiento | -55C to +150C | -55°C to +150°C |
| Packaging | Tape & Reel | — |
| Estado RoHS | Compliant | Compliant |
| Part Status | Active | — |
| Polarity | — | N-Channel |
| Drain-Source Breakdown Voltage (BVdss) | — | 950 V |
| Continuous Drain Current (ID) at 25°C | — | 13 A |
| Continuous Drain Current (ID) at 100°C | — | 8.2 A |
| Pulsed Drain Current (IDM) | — | 39 A |
| On-Resistance (RDS(on)) at VGS=10V | — | 0.55 ohm (typical) |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3 V to 5 V |
| Gate Charge (Qg) | — | 45 nC |
| Input Capacitance (Ciss) | — | 1900 pF |
| Output Capacitance (Coss) | — | 120 pF |
| Reverse Transfer Capacitance (Crss) | — | 10 pF |
| Avalanche Energy (EAS) | — | 400 mJ |
| Sin halógenos | — | Yes |