IPN95R1K2P7ATMA1 vs STF13N95K3 Comparison

Detailed side-by-side comparison of IPN95R1K2P7ATMA1 by Infineon and STF13N95K3 by STMicroelectronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPN95R1K2P7ATMA1 IPN95R1K2P7ATMA1 - 950V CoolMOS P7 N-Channel MOSFET | Infineon

IPN95R1K2P7ATMA1 - 950V CoolMOS P7 N-Channel MOSFET | Infineon

IPN95R1K2P7ATMA1 βœ“ Active
STMicroelectronics
STF13N95K3 STF13N95K3 - 13A, 950V N-Channel Power MOSFET | STMicroelectronics

STF13N95K3 - 13A, 950V N-Channel Power MOSFET | STMicroelectronics

STF13N95K3 βœ“ Active

Specification Comparison

Parameter IPN95R1K2P7ATMA1 STF13N95K3
Brand Infineon STMicroelectronics
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.36 $1.85
FET Type N-Channel β€”
Technology CoolMOS P7 (Super Junction) β€”
Drain-to-Source Voltage (V_DSS) 950 V β€”
Continuous Drain Current (I_D) at T_C 6 A β€”
Maximum On-Resistance R_DS(on) at V_GS=10V 1200 mOhm (1.2 Ohm) β€”
Gate Drive Voltage (max R_DS(on)) 10 V β€”
Power Dissipation (T_C) 7 W β€”
Package SOT-223-3 (PG-SOT223) TO-220FP
Mounting Type Surface Mount Through Hole
Pin Count 3 (2 + Tab) β€”
Series CoolMOS P7 β€”
Operating Temperature Range -55C to +150C -55Β°C to +150Β°C
Packaging Tape & Reel β€”
RoHS Status Compliant Compliant
Part Status Active β€”
Polarity β€” N-Channel
Drain-Source Breakdown Voltage (BVdss) β€” 950 V
Continuous Drain Current (ID) at 25Β°C β€” 13 A
Continuous Drain Current (ID) at 100Β°C β€” 8.2 A
Pulsed Drain Current (IDM) β€” 39 A
On-Resistance (RDS(on)) at VGS=10V β€” 0.55 ohm (typical)
Gate-Source Threshold Voltage (VGS(th)) β€” 3 V to 5 V
Gate Charge (Qg) β€” 45 nC
Input Capacitance (Ciss) β€” 1900 pF
Output Capacitance (Coss) β€” 120 pF
Reverse Transfer Capacitance (Crss) β€” 10 pF
Avalanche Energy (EAS) β€” 400 mJ
Halogen Free β€” Yes

Datasheets & Resources

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