IPN95R1K2P7ATMA1 vs STF13N95K3 Vergleich
Detaillierter Direktvergleich von IPN95R1K2P7ATMA1 von Infineon und STF13N95K3 von STMicroelectronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
STMicroelectronics
STF13N95K3 - 13A, 950V N-Channel Power MOSFET | STMicroelectronics
STF13N95K3 ✓ AktivSpezifikationsvergleich
| Parameter | IPN95R1K2P7ATMA1 | STF13N95K3 |
|---|---|---|
| Marke | Infineon | STMicroelectronics |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,36 | $1,85 |
| FET Type | N-Channel | — |
| Technology | CoolMOS P7 (Super Junction) | — |
| Drain-to-Source Voltage (V_DSS) | 950 V | — |
| Continuous Drain Current (I_D) at T_C | 6 A | — |
| Maximum On-Resistance R_DS(on) at V_GS=10V | 1200 mOhm (1.2 Ohm) | — |
| Gate Drive Voltage (max R_DS(on)) | 10 V | — |
| Power Dissipation (T_C) | 7 W | — |
| Gehäuse | SOT-223-3 (PG-SOT223) | TO-220FP |
| Montageart | Surface Mount | Through Hole |
| Pin-Anzahl | 3 (2 + Tab) | — |
| Series | CoolMOS P7 | — |
| Betriebstemperaturbereich | -55C to +150C | -55°C to +150°C |
| Packaging | Tape & Reel | — |
| RoHS-Status | Compliant | Compliant |
| Part Status | Active | — |
| Polarity | — | N-Channel |
| Drain-Source Breakdown Voltage (BVdss) | — | 950 V |
| Continuous Drain Current (ID) at 25°C | — | 13 A |
| Continuous Drain Current (ID) at 100°C | — | 8.2 A |
| Pulsed Drain Current (IDM) | — | 39 A |
| On-Resistance (RDS(on)) at VGS=10V | — | 0.55 ohm (typical) |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3 V to 5 V |
| Gate Charge (Qg) | — | 45 nC |
| Input Capacitance (Ciss) | — | 1900 pF |
| Output Capacitance (Coss) | — | 120 pF |
| Reverse Transfer Capacitance (Crss) | — | 10 pF |
| Avalanche Energy (EAS) | — | 400 mJ |
| Halogenfrei | — | Yes |