IPP100N12S305AKSA1 vs IHW40N120R5XKSA1 Comparación
Comparación detallada lado a lado de IPP100N12S305AKSA1 por Infineon y IHW40N120R5XKSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon
IPP100N12S305AKSA1 ✓ Activo
Comparación de especificaciones
| Parámetro | IPP100N12S305AKSA1 | IHW40N120R5XKSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | IGBTs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,05 | $3,50 |
| Tipo de transistor | N-Channel MOSFET | — |
| Technology | OptiMOS trench | Trench Field Stop, Reverse-Conducting RC-H5 |
| Drain-Source Voltage (VDS) | 120 V | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Corriente de drenador pulsada | [DATA_NEEDED: pulsed ID value] | — |
| Maximum Power Dissipation (Ptot) at Tc | 300 W | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Avalanche Energy, Single Pulse | [DATA_NEEDED: EAS] | — |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | -40C to +175C |
| Encapsulado | TO-220 (PG-TO220-3-1) | TO-247-3 (PG-TO247-3) through-hole |
| Tipo de montaje | Through Hole | Through Hole |
| Recuento de pines | 3 | — |
| MSL Moisture Sensitivity Level | 1 (260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Tested | 100% tested | — |
| RoHS Compliance | Compliant (Green product) | Compliant |
| Collector-Emitter Voltage (VCE) | — | 1200 V |
| Continuous Collector Current (IC, TC=25C) | — | 80 A |
| Pulsed Collector Current (ICM) | — | 160 A |
| Maximum Power Dissipation (Ptot) | — | 394 W |
| Gate-Emitter Voltage (VGE) | — | +/-20 V |
| VCE(sat) at IC=40A, VGE=15V, Tj=25C | — | [DATA_NEEDED: typical VCE(sat) value] |
| Integrated Anti-Parallel Diode | — | Yes (monolithic reverse-conducting) |
| Storage Temperature | — | -55C to +150C |
| Soldering Temperature (max 10s) | — | 260 C |
| Switching Application | — | Resonant / soft switching (induction cooking optimized) |
| Sin halógenos | — | Yes |
| Nivel MSL | — | N/A (through-hole) |