IPP100N12S305AKSA1 vs IHW40N120R5XKSA1 对比

详细并排对比 IPP100N12S305AKSA1 出自 Infineon 和 IHW40N120R5XKSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPP100N12S305AKSA1 IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon

IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon

IPP100N12S305AKSA1 ✓ 量产中
Infineon
IHW40N120R5XKSA1 IHW40N120R5XKSA1 - 1200V 40A RC-H5 IGBT | Infineon

IHW40N120R5XKSA1 - 1200V 40A RC-H5 IGBT | Infineon

IHW40N120R5XKSA1 ✓ 量产中

规格对比

参数 IPP100N12S305AKSA1 IHW40N120R5XKSA1
品牌 Infineon Infineon
分类 MOSFETs IGBTs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.05 $3.50
晶体管类型 N-Channel MOSFET —
Technology OptiMOS trench Trench Field Stop, Reverse-Conducting RC-H5
Drain-Source Voltage (VDS) 120 V —
Continuous Drain Current (ID) at Tc 100 A —
脉冲漏极电流 [DATA_NEEDED: pulsed ID value] —
Maximum Power Dissipation (Ptot) at Tc 300 W —
Gate-Source Voltage (VGS) max ±20 V —
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) at VGS=10V] —
Avalanche Energy, Single Pulse [DATA_NEEDED: EAS] —
工作结温 -55 °C to +175 °C -40C to +175C
封装 TO-220 (PG-TO220-3-1) TO-247-3 (PG-TO247-3) through-hole
安装类型 Through Hole Through Hole
引脚数量 3 —
MSL Moisture Sensitivity Level 1 (260 °C peak reflow) —
Automotive Qualification AEC-Q101 qualified —
Avalanche Tested 100% tested —
RoHS Compliance Compliant (Green product) Compliant
Collector-Emitter Voltage (VCE) — 1200 V
Continuous Collector Current (IC, TC=25C) — 80 A
Pulsed Collector Current (ICM) — 160 A
Maximum Power Dissipation (Ptot) — 394 W
Gate-Emitter Voltage (VGE) — +/-20 V
VCE(sat) at IC=40A, VGE=15V, Tj=25C — [DATA_NEEDED: typical VCE(sat) value]
Integrated Anti-Parallel Diode — Yes (monolithic reverse-conducting)
Storage Temperature — -55C to +150C
Soldering Temperature (max 10s) — 260 C
Switching Application — Resonant / soft switching (induction cooking optimized)
无卤 — Yes
MSL 等级 — N/A (through-hole)

数据手册与资源

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