IPP100N12S305AKSA1 vs IHW40N120R5XKSA1 Comparaison
Comparaison détaillée côte à côte de IPP100N12S305AKSA1 par Infineon et IHW40N120R5XKSA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon
IPP100N12S305AKSA1 ✓ Actif
Comparaison des spécifications
| Paramètre | IPP100N12S305AKSA1 | IHW40N120R5XKSA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | IGBTs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,05 | $3,50 |
| Type de transistor | N-Channel MOSFET | — |
| Technology | OptiMOS trench | Trench Field Stop, Reverse-Conducting RC-H5 |
| Drain-Source Voltage (VDS) | 120 V | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Courant de drain pulsé | [DATA_NEEDED: pulsed ID value] | — |
| Maximum Power Dissipation (Ptot) at Tc | 300 W | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Avalanche Energy, Single Pulse | [DATA_NEEDED: EAS] | — |
| Température de jonction en fonctionnement | -55 °C to +175 °C | -40C to +175C |
| Boîtier | TO-220 (PG-TO220-3-1) | TO-247-3 (PG-TO247-3) through-hole |
| Type de montage | Through Hole | Through Hole |
| Nombre de broches | 3 | — |
| MSL Moisture Sensitivity Level | 1 (260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Tested | 100% tested | — |
| RoHS Compliance | Compliant (Green product) | Compliant |
| Collector-Emitter Voltage (VCE) | — | 1200 V |
| Continuous Collector Current (IC, TC=25C) | — | 80 A |
| Pulsed Collector Current (ICM) | — | 160 A |
| Maximum Power Dissipation (Ptot) | — | 394 W |
| Gate-Emitter Voltage (VGE) | — | +/-20 V |
| VCE(sat) at IC=40A, VGE=15V, Tj=25C | — | [DATA_NEEDED: typical VCE(sat) value] |
| Integrated Anti-Parallel Diode | — | Yes (monolithic reverse-conducting) |
| Storage Temperature | — | -55C to +150C |
| Soldering Temperature (max 10s) | — | 260 C |
| Switching Application | — | Resonant / soft switching (induction cooking optimized) |
| Sans halogène | — | Yes |
| Niveau MSL | — | N/A (through-hole) |