IPP600N25N3GXKSA1 vs STW45NM50 Comparación
Comparación detallada lado a lado de IPP600N25N3GXKSA1 por Infineon y STW45NM50 por STMicroelectronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
STMicroelectronics
STW45NM50 - 45A, 500V N-Channel Power MOSFET | STMicroelectronics
STW45NM50 ✓ ActivoComparación de especificaciones
| Parámetro | IPP600N25N3GXKSA1 | STW45NM50 |
|---|---|---|
| Marca | Infineon | STMicroelectronics |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,62 | $9,55 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 3 | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain-to-Source Voltage (VDS) | 250 V | — |
| Continuous Drain Current (ID) at Tc=25C | 25 A | — |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 60 mOhm at VGS=10V | — |
| Power Dissipation (PD) at Tc=25C | 136 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Encapsulado / Carcasa | TO-220-3 (PG-TO220-3-1) | — |
| Tipo de montaje | Through Hole | Through Hole |
| Rango de temperatura de funcionamiento | -55C to +175C (junction) | -55°C to +150°C |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| Reverse Recovery Time (trr) | [DATA_NEEDED: trr typical value] | — |
| Lead Free Status | Lead Free / RoHS Compliant | — |
| Recuento de pines | 3 (Gate, Drain, Source) | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 500 V |
| Continuous Drain Current (ID) at 25°C | — | 45 A |
| Continuous Drain Current (ID) at 100°C | — | 30 A |
| Pulsed Drain Current (IDM) | — | 180 A |
| Gate-Source Voltage (VGS) | — | ±30 V |
| On-Resistance (RDS(on)) | — | 0.09 ohm |
| Gate Charge (Qg) | — | 120 nC |
| Avalanche Energy (EAS) | — | 1.2 J |
| Power Dissipation (PD) | — | 450 W |
| Encapsulado | — | TO-247 |
| Estado RoHS | — | Compliant |
| Sin halógenos | — | Yes |