IPP600N25N3GXKSA1 vs STW45NM50 比較
詳細な並列比較: IPP600N25N3GXKSA1 メーカー: Infineon および STW45NM50 メーカー: STMicroelectronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
STMicroelectronics
STW45NM50 - 45A, 500V N-Channel Power MOSFET | STMicroelectronics
STW45NM50 ✓ 生産中仕様比較
| パラメータ | IPP600N25N3GXKSA1 | STW45NM50 |
|---|---|---|
| ブランド | Infineon | STMicroelectronics |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.62 | $9.55 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 3 | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain-to-Source Voltage (VDS) | 250 V | — |
| Continuous Drain Current (ID) at Tc=25C | 25 A | — |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 60 mOhm at VGS=10V | — |
| Power Dissipation (PD) at Tc=25C | 136 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| パッケージ / ケース | TO-220-3 (PG-TO220-3-1) | — |
| 実装タイプ | Through Hole | Through Hole |
| 動作温度範囲 | -55C to +175C (junction) | -55°C to +150°C |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| Reverse Recovery Time (trr) | [DATA_NEEDED: trr typical value] | — |
| Lead Free Status | Lead Free / RoHS Compliant | — |
| ピン数 | 3 (Gate, Drain, Source) | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 500 V |
| Continuous Drain Current (ID) at 25°C | — | 45 A |
| Continuous Drain Current (ID) at 100°C | — | 30 A |
| Pulsed Drain Current (IDM) | — | 180 A |
| Gate-Source Voltage (VGS) | — | ±30 V |
| On-Resistance (RDS(on)) | — | 0.09 ohm |
| Gate Charge (Qg) | — | 120 nC |
| Avalanche Energy (EAS) | — | 1.2 J |
| Power Dissipation (PD) | — | 450 W |
| パッケージ | — | TO-247 |
| RoHS ステータス | — | Compliant |
| ハロゲンフリー | — | Yes |