IQE008N03LM5CGSCATMA1 vs IQEH50NE2LM7UCGSCATMA1 Comparación
Comparación detallada lado a lado de IQE008N03LM5CGSCATMA1 por Infineon y IQEH50NE2LM7UCGSCATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IQE008N03LM5CGSCATMA1 - 30V 0.85mOhm Dual N-MOSFET | Infineon
IQE008N03LM5CGSCATMA1 ✓ ActivoInfineon
IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon
IQEH50NE2LM7UCGSCATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IQE008N03LM5CGSCATMA1 | IQEH50NE2LM7UCGSCATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,10 | $1,78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 7 Power-Transistor |
| Configuration | Dual N-Channel MOSFET Array | — |
| Drain-Source Voltage (VDS) Max | 30 V | 25 V |
| Continuous Drain Current (ID) Max | 252 A (per channel, case-temperature limited) | — |
| On-Resistance (RDS(on)) Max | 0.85 mOhm at VGS = 10 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS maximum rating] | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Rango de temperatura de funcionamiento | -55C to +150C (junction) | — |
| Encapsulado | PG-WHTFN-9 (WHTFN) | PG-WHTFN-9-1 (surface mount) |
| Tipo de montaje | Surface Mount (top + bottom cooling) | Surface Mount |
| Technology | Trench MOSFET (OptiMOS 5) | Silicon N-Channel Power MOSFET |
| Polarity | N-Channel | — |
| Número de pines | 9 (WHTFN with exposed thermal pads) | — |
| Nivel MSL | 1 (per JEDEC J-STD-020, typical for Infineon Power-SMD packages) | — |
| Estado RoHS | Compliant | — |
| Sin halógenos | Yes (Infineon standard for OptiMOS 5) | — |
| Tipo de transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA | — | 54 A |
| Continuous Drain Current (ID) at TC | — | 422 A |
| RDS(on) Max | — | 0.5 mΩ |
| Gate Threshold Voltage (VGS(th)) typ | — | 2 V |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 150 W |
| Maximum Junction Temperature | — | 175 °C |
| Series | — | OptiMOS 7 |