IQE008N03LM5CGSCATMA1 vs IQEH50NE2LM7UCGSCATMA1 对比
详细并排对比 IQE008N03LM5CGSCATMA1 出自 Infineon 和 IQEH50NE2LM7UCGSCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IQE008N03LM5CGSCATMA1 | IQEH50NE2LM7UCGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.10 | $1.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 7 Power-Transistor |
| Configuration | Dual N-Channel MOSFET Array | — |
| Drain-Source Voltage (VDS) Max | 30 V | 25 V |
| Continuous Drain Current (ID) Max | 252 A (per channel, case-temperature limited) | — |
| On-Resistance (RDS(on)) Max | 0.85 mOhm at VGS = 10 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS maximum rating] | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| 工作温度范围 | -55C to +150C (junction) | — |
| 封装 | PG-WHTFN-9 (WHTFN) | PG-WHTFN-9-1 (surface mount) |
| 安装类型 | Surface Mount (top + bottom cooling) | Surface Mount |
| Technology | Trench MOSFET (OptiMOS 5) | Silicon N-Channel Power MOSFET |
| Polarity | N-Channel | — |
| 引脚数 | 9 (WHTFN with exposed thermal pads) | — |
| MSL 等级 | 1 (per JEDEC J-STD-020, typical for Infineon Power-SMD packages) | — |
| RoHS 状态 | Compliant | — |
| 无卤 | Yes (Infineon standard for OptiMOS 5) | — |
| 晶体管类型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA | — | 54 A |
| Continuous Drain Current (ID) at TC | — | 422 A |
| RDS(on) Max | — | 0.5 mΩ |
| Gate Threshold Voltage (VGS(th)) typ | — | 2 V |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 150 W |
| Maximum Junction Temperature | — | 175 °C |
| Series | — | OptiMOS 7 |