IQFH55N04NM6ATMA1 vs IQDH35N03LM5SCATMA1 Comparación
Comparación detallada lado a lado de IQFH55N04NM6ATMA1 por Infineon y IQDH35N03LM5SCATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IQFH55N04NM6ATMA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,38 | $2,05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 | — |
| Tipo de transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D) @ TA=25°C | 53 A | — |
| Pulsed Drain Current @ TC=25°C | 451 A | — |
| Static R_DS(on) (typ) | 0.55 mΩ | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 214 W | — |
| Encapsulado | PG-TSON-12-1 (PQFN 8x6 mm², clip-based) | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | — |
| Gate Charge (Q_G) | [DATA_NEEDED: total gate charge] | — |
| Temperatura de unión de funcionamiento | -55°C to +175°C | — |
| Technology | Trench MOSFET (OptiMOS 6 generation) | OptiMOS 5 (trench, shielded-gate) |
| Estado RoHS | Compliant | Compliant |
| AEC-Q100 | [DATA_NEEDED: automotive qualification status] | — |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at Ta | — | 66 A |
| Pulsed Drain Current (IDM) at Tc | — | 700 A |
| On-State Resistance (RDS(on)) max | — | 0.35 mOhm @ VGS=10V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 278 W |
| Rango de temperatura de funcionamiento | — | -55 C to +175 C |
| Nivel MSL | — | 1 (unlimited) |
| Marking | — | IQDH35N03LM5S |