IQFH55N04NM6ATMA1 vs IQDH35N03LM5SCATMA1 Comparison
Detailed side-by-side comparison of IQFH55N04NM6ATMA1 by Infineon and IQDH35N03LM5SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 ✓ ActiveSpecification Comparison
| Parameter | IQFH55N04NM6ATMA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 | — |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D) @ TA=25°C | 53 A | — |
| Pulsed Drain Current @ TC=25°C | 451 A | — |
| Static R_DS(on) (typ) | 0.55 mΩ | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 214 W | — |
| Package | PG-TSON-12-1 (PQFN 8x6 mm², clip-based) | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) |
| Mounting Type | Surface Mount | Surface Mount |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | — |
| Gate Charge (Q_G) | [DATA_NEEDED: total gate charge] | — |
| Operating Junction Temperature | -55°C to +175°C | — |
| Technology | Trench MOSFET (OptiMOS 6 generation) | OptiMOS 5 (trench, shielded-gate) |
| RoHS Status | Compliant | Compliant |
| AEC-Q100 | [DATA_NEEDED: automotive qualification status] | — |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at Ta | — | 66 A |
| Pulsed Drain Current (IDM) at Tc | — | 700 A |
| On-State Resistance (RDS(on)) max | — | 0.35 mOhm @ VGS=10V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 278 W |
| Operating Temperature Range | — | -55 C to +175 C |
| MSL Level | — | 1 (unlimited) |
| Marking | — | IQDH35N03LM5S |