IR2181STRPBF vs IR2101STRPBF Comparación
Comparación detallada lado a lado de IR2181STRPBF por Infineon y IR2101STRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IR2181STRPBF | IR2101STRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,74 | $0,68 |
| Configuration | High and Low Side, Independent | Half-Bridge (High-Side and Low-Side), Independent |
| Input Type | Non-Inverting | — |
| Supply Voltage (VCC) | 10 V to 20 V | — |
| Logic Input Compatibility | 3.3 V and 5 V | 3.3 V / 5 V / 15 V CMOS/LSTTL |
| Output Current (Source) | 1.9 A peak | — |
| Output Current (Sink) | 2.3 A peak | — |
| High-Side Floating Supply Voltage (VBS) | Up to 600 V offset | — |
| Propagation Delay (typ) | 180 ns | — |
| Rise Time (typ) | [DATA_NEEDED: rise time] | — |
| Fall Time (typ) | [DATA_NEEDED: fall time] | — |
| dV/dt Immunity | Yes | — |
| Negative Transient Voltage Tolerance | Yes | — |
| Undervoltage Lockout | Independent for high-side and low-side | — |
| Encapsulado | 8-SOIC (0.154", 3.90 mm width) | 8-SOIC (0.154 inch, 3.90 mm Width) |
| Rango de temperatura de funcionamiento | -40 C to +125 C | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | [DATA_NEEDED: MSL level] | MSL 3 |
| Estado RoHS | Compliant (PBF suffix) | Compliant |
| Lead-Free | Yes | — |
| Number of Drivers | — | 2 |
| Driver Type | — | Non-Inverting |
| Maximum Offset Voltage | — | 600 V |
| Gate Drive Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (Typ.) | — | 210 mA |
| Sink Current (Typ.) | — | 360 mA |
| Propagation Delay (Typ.) | — | 160 ns |
| Rise Time (Typ.) | — | [DATA_NEEDED: rise time] |
| Fall Time (Typ.) | — | [DATA_NEEDED: fall time] |
| Bootstrap Diode | — | Integrated |
| Undervoltage Lockout (UVLO) | — | Yes (VCC and VBS) |
| Negative Transient Immunity on VS | — | Yes (dV/dt immune) |
| Temperatura de funcionamiento | — | -40 C to +125 C |