IR2181STRPBF vs IR2101STRPBF Comparison

Detailed side-by-side comparison of IR2181STRPBF by Infineon and IR2101STRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IR2181STRPBF IR2101STRPBF
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Configuration High and Low Side, Independent Half-Bridge (High-Side and Low-Side), Independent
Input Type Non-Inverting —
Supply Voltage (VCC) 10 V to 20 V —
Logic Input Compatibility 3.3 V and 5 V 3.3 V / 5 V / 15 V CMOS/LSTTL
Output Current (Source) 1.9 A peak —
Output Current (Sink) 2.3 A peak —
High-Side Floating Supply Voltage (VBS) Up to 600 V offset —
Propagation Delay (typ) 180 ns —
Rise Time (typ) [DATA_NEEDED: rise time] —
Fall Time (typ) [DATA_NEEDED: fall time] —
dV/dt Immunity Yes —
Negative Transient Voltage Tolerance Yes —
Undervoltage Lockout Independent for high-side and low-side —
Package 8-SOIC (0.154", 3.90 mm width) 8-SOIC (0.154 inch, 3.90 mm Width)
Operating Temperature Range -40 C to +125 C —
Mounting Type Surface Mount Surface Mount
MSL Level [DATA_NEEDED: MSL level] MSL 3
RoHS Status Compliant (PBF suffix) Compliant
Lead-Free Yes —
Number of Drivers — 2
Driver Type — Non-Inverting
Maximum Offset Voltage — 600 V
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Source Current (Typ.) — 210 mA
Sink Current (Typ.) — 360 mA
Propagation Delay (Typ.) — 160 ns
Rise Time (Typ.) — [DATA_NEEDED: rise time]
Fall Time (Typ.) — [DATA_NEEDED: fall time]
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — Yes (VCC and VBS)
Negative Transient Immunity on VS — Yes (dV/dt immune)
Operating Temperature — -40 C to +125 C

Datasheets & Resources

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