IR2304SPBF vs 1EDN7146UXTSA1 Comparación
Comparación detallada lado a lado de IR2304SPBF por Infineon y 1EDN7146UXTSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IR2304SPBF | 1EDN7146UXTSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,48 | $0,82 |
| Product Type | Half-Bridge Gate Driver IC | — |
| Configuration | High and Low Side, Independent Channels | — |
| Número de salidas | 2 | — |
| Maximum Offset (Bootstrap) Voltage | 600 V | — |
| Gate Drive Supply Voltage (VCC) | 10 V to 20 V | — |
| Output Source/Sink Current | 60 mA / 130 mA | — |
| Propagation Delay (Typical) | 220 ns | — |
| Input Logic Compatibility | 3.3 V, 5 V, 15 V | — |
| Undervoltage Lockout (UVLO) | Both High-Side and Low-Side Channels | — |
| Negative Transient Voltage Tolerance | Yes (dV/dt immune) | — |
| Logic Input Polarity | Non-Inverting | — |
| Encapsulado | 8-Pin SOIC (SO-8 N) | PG-VSON-1 (6-pin with exposed pad) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -40 C to +125 C | -40C to +125C |
| Technology | HVIC + Latch-Immune CMOS, Monolithic | — |
| Estado RoHS | Compliant (Pb-free) | Compliant |
| Driver Type | — | Single-channel high-side TDI gate driver |
| Maximum Blocking Voltage | — | 200 V |
| Input Configuration | — | Truly differential (TDI) |
| Output Current (Source / Sink) | — | 1.5 A / 2.5 A |
| Propagation Delay | — | [DATA_NEEDED: typical propagation delay ns] |
| Tiempo de subida | — | [DATA_NEEDED: typical rise time ns] |
| Tiempo de bajada | — | [DATA_NEEDED: typical fall time ns] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range V] |
| Target Transistor | — | GaN SG HEMT or power MOSFET |
| Nivel MSL | — | [DATA_NEEDED: MSL rating] |
| Topology Support | — | Half-bridge, low-side, high-side |