IR2304SPBF vs 1EDN7146UXTSA1 对比

详细并排对比 IR2304SPBF 出自 Infineon 和 1EDN7146UXTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
1EDN7146UXTSA1 1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 ✓ 量产中

规格对比

参数 IR2304SPBF 1EDN7146UXTSA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.48 $0.82
Product Type Half-Bridge Gate Driver IC —
Configuration High and Low Side, Independent Channels —
输出数量 2 —
Maximum Offset (Bootstrap) Voltage 600 V —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Output Source/Sink Current 60 mA / 130 mA —
Propagation Delay (Typical) 220 ns —
Input Logic Compatibility 3.3 V, 5 V, 15 V —
Undervoltage Lockout (UVLO) Both High-Side and Low-Side Channels —
Negative Transient Voltage Tolerance Yes (dV/dt immune) —
Logic Input Polarity Non-Inverting —
封装 8-Pin SOIC (SO-8 N) PG-VSON-1 (6-pin with exposed pad)
安装类型 Surface Mount Surface Mount
工作温度范围 -40 C to +125 C -40C to +125C
Technology HVIC + Latch-Immune CMOS, Monolithic —
RoHS 状态 Compliant (Pb-free) Compliant
Driver Type — Single-channel high-side TDI gate driver
Maximum Blocking Voltage — 200 V
Input Configuration — Truly differential (TDI)
Output Current (Source / Sink) — 1.5 A / 2.5 A
Propagation Delay — [DATA_NEEDED: typical propagation delay ns]
上升时间 — [DATA_NEEDED: typical rise time ns]
下降时间 — [DATA_NEEDED: typical fall time ns]
Supply Voltage (VCC) — [DATA_NEEDED: VCC range V]
Target Transistor — GaN SG HEMT or power MOSFET
MSL 等级 — [DATA_NEEDED: MSL rating]
Topology Support — Half-bridge, low-side, high-side

数据手册与资源

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