IR2304SPBF vs 2ED2304S06FXUMA1 Comparación
Comparación detallada lado a lado de IR2304SPBF por Infineon y 2ED2304S06FXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IR2304SPBF | 2ED2304S06FXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,48 | $0,66 |
| Product Type | Half-Bridge Gate Driver IC | — |
| Configuration | High and Low Side, Independent Channels | — |
| Número de salidas | 2 | — |
| Maximum Offset (Bootstrap) Voltage | 600 V | — |
| Gate Drive Supply Voltage (VCC) | 10 V to 20 V | — |
| Output Source/Sink Current | 60 mA / 130 mA | — |
| Propagation Delay (Typical) | 220 ns | — |
| Input Logic Compatibility | 3.3 V, 5 V, 15 V | 3.3 V CMOS / LSTTL (Schmitt-trigger) |
| Undervoltage Lockout (UVLO) | Both High-Side and Low-Side Channels | Yes (VCC and VB-VS) |
| Negative Transient Voltage Tolerance | Yes (dV/dt immune) | — |
| Logic Input Polarity | Non-Inverting | — |
| Encapsulado | 8-Pin SOIC (SO-8 N) | PG-DSO-8-910 (DSO-8) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -40 C to +125 C | -40C to +125C |
| Technology | HVIC + Latch-Immune CMOS, Monolithic | Infineon thin-film SOI |
| Estado RoHS | Compliant (Pb-free) | Compliant |
| Driver Configuration | — | Half-Bridge (High-Side + Low-Side) |
| Blocking Voltage (High-Side) | — | 650 V |
| Source Current (typ.) | — | 0.36 A |
| Sink Current (typ.) | — | 0.7 A |
| VCC Supply Range | — | 10 V to 17 V |
| Bootstrap Diode | — | Integrated (BSD) |
| Interlock / Anti-Shoot-Through | — | Built-in |
| Propagation Delay (typ.) | — | 200 ns |
| Nivel MSL | — | 2 |