IRF1310NSTRLPBF vs IPB100N12S305ATMA2 Comparación
Comparación detallada lado a lado de IRF1310NSTRLPBF por Infineon y IPB100N12S305ATMA2 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPB100N12S305ATMA2 - 120V 100A N-Ch MOSFET | Infineon OptiMOS 5
IPB100N12S305ATMA2 ✓ ActivoComparación de especificaciones
| Parámetro | IRF1310NSTRLPBF | IPB100N12S305ATMA2 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,84 | $1,95 |
| Tipo de transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 120 V |
| Continuous Drain Current (ID) at TC=25C | 42 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 36 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | ±20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | 73.3 nC | — |
| Power Dissipation (PD) at TC=25C | 160 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Rango de temperatura de funcionamiento | -55C to +175C | -55 °C to +175 °C (TJ) |
| Encapsulado | D2PAK (TO-263AB) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | IR MOSFET (HEXFET) | — |
| Built-in Diode | Yes (intrinsic body diode) | — |
| Lead-Free / RoHS | Yes (PBF suffix) | — |
| Configuration | Single with built-in diode | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 120V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Power Dissipation (PD) at Tc | — | 300 W |
| Drain-Source On-Resistance RDS(on) | — | 0.0048 ohm (4.8 mΩ) at VGS=10 V |
| Maximum Junction Temperature | — | 175 °C |
| Avalanche Energy (EAS) | — | 1445 mJ |
| Encapsulado / Carcasa | — | PG-TO263-3-2 (D2PAK) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Estado RoHS | — | Compliant |
| Nivel MSL | — | [DATA_NEEDED: MSL rating] |