IRF1310NSTRLPBF vs IPB100N12S305ATMA2 对比
详细并排对比 IRF1310NSTRLPBF 出自 Infineon 和 IPB100N12S305ATMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF1310NSTRLPBF | IPB100N12S305ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.84 | $1.95 |
| 晶体管类型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 120 V |
| Continuous Drain Current (ID) at TC=25C | 42 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 36 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | ±20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | 73.3 nC | — |
| Power Dissipation (PD) at TC=25C | 160 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| 工作温度范围 | -55C to +175C | -55 °C to +175 °C (TJ) |
| 封装 | D2PAK (TO-263AB) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | IR MOSFET (HEXFET) | — |
| Built-in Diode | Yes (intrinsic body diode) | — |
| Lead-Free / RoHS | Yes (PBF suffix) | — |
| Configuration | Single with built-in diode | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 120V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Power Dissipation (PD) at Tc | — | 300 W |
| Drain-Source On-Resistance RDS(on) | — | 0.0048 ohm (4.8 mΩ) at VGS=10 V |
| Maximum Junction Temperature | — | 175 °C |
| Avalanche Energy (EAS) | — | 1445 mJ |
| 封装 / 外壳 | — | PG-TO263-3-2 (D2PAK) |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS 状态 | — | Compliant |
| MSL 等级 | — | [DATA_NEEDED: MSL rating] |