IRF530NPBF vs IRF520NPBF Comparación
Comparación detallada lado a lado de IRF530NPBF por Infineon y IRF520NPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF530NPBF | IRF520NPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,38 | $0,66 |
| Part Number | IRF530NPBF | — |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Tipo de transistor | N-Channel HEXFET Power MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 17 A | — |
| Pulsed Drain Current (IDM) | 60 A | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 90 mOhm (max, approximate per datasheet) | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V | — |
| Maximum Power Dissition (Pd) at Tc | 70 W | — |
| Temperatura de unión de funcionamiento | -55 C to +175 C | — |
| Encapsulado / Carcasa | TO-220AB (through-hole) | — |
| Tipo de montaje | Through Hole | Through Hole |
| Avalanche Rated | Yes | — |
| Estado RoHS | Compliant | Compliant (Pb-free) |
| Nivel MSL | N/A (through-hole) | 1 (unlimited) |
| Configuration | Single N-channel, 3 pins (Gate, Drain, Source) | — |
| Series | — | HEXFET |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (V_DSS) | — | 100 V |
| Continuous Drain Current (I_D) at Tc | — | 9.7 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current value] |
| Gate-to-Source Voltage (V_GS) max | — | ±20 V |
| R_DS(on) max at V_GS=10V | — | 200 mOhm |
| Total Gate Charge (Q_g) | — | 16.7 nC |
| Power Dissipation (P_D) at Tc | — | 48 W |
| Rango de temperatura de funcionamiento | — | -55C to +175C |
| Encapsulado | — | TO-220AB (through-hole) |
| Lead-Free Finish | — | Yes (PBF suffix) |
| Technology | — | HEXFET (vertical DMOS) |