IRFH6200TRPBF vs IRFH5015TRPBF Comparación
Comparación detallada lado a lado de IRFH6200TRPBF por Infineon y IRFH5015TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFH6200TRPBF | IRFH5015TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,53 | $0,62 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRFH6200TRPBF | — |
| Technology | StrongIRFET (trench N-channel) | IR MOSFET (HEXFET) |
| Drain-to-Source Voltage (VDS) | 20 V | — |
| Continuous Drain Current (ID) at Ta=25C | 49 A | — |
| Continuous Drain Current (ID) at Tc=25C | 100 A | — |
| On-State Resistance RDS(on) max at VGS=10V | 1.2 mOhm | — |
| Gate-to-Source Voltage (VGS) max | [DATA_NEEDED: VGS absolute max rating] | — |
| Total Gate Charge (Qg) | 155 nC | 33 nC |
| Power Dissipation at Ta (25C) | 3.6 W | — |
| Power Dissipation at Tc (25C) | 156 W | — |
| Temperatura de unión de funcionamiento | -55C to +150C | — |
| Encapsulado | 8-PQFN 5x6 mm (Power QFN) | 8-PQFN (5x6) SuperSO8 |
| Tipo de montaje | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (TRPBF suffix = Pb-free T&R) | — |
| Nivel MSL | [DATA_NEEDED: MSL rating per JEDEC J-STD-020] | — |
| Channel Type | N-Channel enhancement mode | — |
| Avalanche Energy Rated | Yes | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at TA=25C | — | 10 A |
| Continuous Drain Current (ID) at TC=25C | — | 56 A |
| On-Resistance (RDS(on)) max | — | 31 mOhm |
| Power Dissipation (TA=25C) | — | 3.6 W |
| Power Dissipation (TC=25C) | — | 156 W |
| Gate Drive Voltage (VGS recommended) | — | 10 V |
| Configuration | — | Single with built-in body diode |
| Temperatura de funcionamiento | — | -55C to +150C (TJ max) |
| Estado RoHS | — | Compliant |