IRFH6200TRPBF vs IRFH5015TRPBF Comparison
Detailed side-by-side comparison of IRFH6200TRPBF by Infineon and IRFH5015TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFH6200TRPBF
IRFH6200TRPBF - 20V N-Ch StrongIRFET MOSFET, 8-PQFN 5x6 | Infineon
IRFH6200TRPBF β ActiveInfineon
IRFH5015TRPBF
IRFH5015TRPBF - 150V N-Ch 31mOhm HEXFET MOSFET | Infineon
IRFH5015TRPBF β ActiveSpecification Comparison
| Parameter | IRFH6200TRPBF | IRFH5015TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.53 | $0.62 |
| Manufacturer | Infineon Technologies | β |
| Part Number | IRFH6200TRPBF | β |
| Technology | StrongIRFET (trench N-channel) | IR MOSFET (HEXFET) |
| Drain-to-Source Voltage (VDS) | 20 V | β |
| Continuous Drain Current (ID) at Ta=25C | 49 A | β |
| Continuous Drain Current (ID) at Tc=25C | 100 A | β |
| On-State Resistance RDS(on) max at VGS=10V | 1.2 mOhm | β |
| Gate-to-Source Voltage (VGS) max | [DATA_NEEDED: VGS absolute max rating] | β |
| Total Gate Charge (Qg) | 155 nC | 33 nC |
| Power Dissipation at Ta (25C) | 3.6 W | β |
| Power Dissipation at Tc (25C) | 156 W | β |
| Operating Junction Temperature | -55C to +150C | β |
| Package | 8-PQFN 5x6 mm (Power QFN) | 8-PQFN (5x6) SuperSO8 |
| Mounting Type | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (TRPBF suffix = Pb-free T&R) | β |
| MSL Level | [DATA_NEEDED: MSL rating per JEDEC J-STD-020] | β |
| Channel Type | N-Channel enhancement mode | β |
| Avalanche Energy Rated | Yes | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 150 V |
| Continuous Drain Current (ID) at TA=25C | β | 10 A |
| Continuous Drain Current (ID) at TC=25C | β | 56 A |
| On-Resistance (RDS(on)) max | β | 31 mOhm |
| Power Dissipation (TA=25C) | β | 3.6 W |
| Power Dissipation (TC=25C) | β | 156 W |
| Gate Drive Voltage (VGS recommended) | β | 10 V |
| Configuration | β | Single with built-in body diode |
| Operating Temperature | β | -55C to +150C (TJ max) |
| RoHS Status | β | Compliant |