IRFR024NTRPBF vs IRFR5505TRLPBF Comparación
Comparación detallada lado a lado de IRFR024NTRPBF por Infineon y IRFR5505TRLPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFR024NTRPBF | IRFR5505TRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,31 | $0,38 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Product Series | HEXFET Power MOSFET (5th generation) | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Maximum Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) | 17 A (at TC = 25 C) | -18 A (Tc) |
| Pulsed Drain Current (IDM) | 60 A | [DATA_NEEDED: IDM] |
| On-Resistance (RDS(on)) | 75 mOhm max (at VGS = 10 V) | — |
| Gate-Source Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V | — |
| Typical Gate Charge (Qg) | 13.3 nC | — |
| Total Power Dissipation (PD) | 45 W (at TC = 25 C) | — |
| Temperatura de unión de funcionamiento | -55 C to +175 C | — |
| Encapsulado | TO-252-3 (DPAK, SC-63), surface mount | TO-252AA (DPAK), surface mount |
| Tipo de montaje | Surface Mount | Surface Mount |
| Packaging | Tape and Reel (TR) | — |
| RoHS Compliance | Compliant (Pb-free / PbF terminations) | — |
| Nivel MSL | 1 (per JEDEC J-STD-020) | 1 |
| Polarity | — | P-Channel |
| MOSFET Operating Mode | — | Enhancement |
| VDS (Drain-Source Voltage) | — | -55 V |
| VGS (Gate-Source Voltage) | — | [DATA_NEEDED: VGS max rating] |
| On-Resistance RDS(on) max | — | 110 mOhm (VGS = -10 V) |
| Total Gate Charge (Qg) | — | 21.3 nC |
| Power Dissipation (PD) | — | 57 W (Tc = 25 °C) |
| Rango de temperatura de funcionamiento | — | -55 °C to +175 °C |
| Thermal Resistance Junction-to-Case (RθJC) | — | [DATA_NEEDED: RθJC] |
| Technology | — | IR MOSFET™ (HEXFET® generation 5) |
| Lead-Free / RoHS | — | Yes (PBF suffix) |