IRFR024NTRPBF vs IRFR5505TRLPBF Comparison

Detailed side-by-side comparison of IRFR024NTRPBF by Infineon and IRFR5505TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR024NTRPBF IRFR5505TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.31 $0.38
Manufacturer Infineon Technologies (formerly International Rectifier)
Product Series HEXFET Power MOSFET (5th generation)
Transistor Type N-Channel MOSFET
Maximum Drain-Source Voltage (VDS) 55 V
Continuous Drain Current (ID) 17 A (at TC = 25 C) -18 A (Tc)
Pulsed Drain Current (IDM) 60 A [DATA_NEEDED: IDM]
On-Resistance (RDS(on)) 75 mOhm max (at VGS = 10 V)
Gate-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V
Typical Gate Charge (Qg) 13.3 nC
Total Power Dissipation (PD) 45 W (at TC = 25 C)
Operating Junction Temperature -55 C to +175 C
Package TO-252-3 (DPAK, SC-63), surface mount TO-252AA (DPAK), surface mount
Mounting Type Surface Mount Surface Mount
Packaging Tape and Reel (TR)
RoHS Compliance Compliant (Pb-free / PbF terminations)
MSL Level 1 (per JEDEC J-STD-020) 1
Polarity P-Channel
MOSFET Operating Mode Enhancement
VDS (Drain-Source Voltage) -55 V
VGS (Gate-Source Voltage) [DATA_NEEDED: VGS max rating]
On-Resistance RDS(on) max 110 mOhm (VGS = -10 V)
Total Gate Charge (Qg) 21.3 nC
Power Dissipation (PD) 57 W (Tc = 25 °C)
Operating Temperature Range -55 °C to +175 °C
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: RθJC]
Technology IR MOSFET™ (HEXFET® generation 5)
Lead-Free / RoHS Yes (PBF suffix)

Datasheets & Resources

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