IRFR2405TRLPBF vs IRFR3806TRPBF Comparación
Comparación detallada lado a lado de IRFR2405TRLPBF por Infineon y IRFR3806TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFR2405TRLPBF | IRFR3806TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,55 | $0,52 |
| Tipo de transistor | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET, 7th generation) | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | 55 V | 60 V |
| Continuous Drain Current (ID) at Tc | 56 A | 43 A |
| Pulsed Drain Current (IDM) | 200 A (typical, per datasheet family) | — |
| On-Resistance RDS(on) max @ VGS=10V | 16 mOhm | — |
| Gate Charge (Qg) typical | 70 nC | — |
| Power Dissipation (PD) at Tc | 110 W | — |
| Gate-Source Voltage (VGS) max | ±20 V | +/- 20 V |
| Rango de temperatura de funcionamiento | -55 C to +175 C (junction) | -55 C to +175 C |
| Encapsulado | TO-252AA (DPAK), 3-pin (2 + Tab) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Avalanche Energy Rated | Yes (HEXFET ruggedized design) | — |
| Lead-Free / RoHS | Yes, PBF suffix indicates lead-free and RoHS compliant | Yes (PBF suffix, lead-free) |
| Packaging | Tape & Reel (TR) | — |
| Transistor Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| On-State Resistance RDS(on) max | — | 15.8 mOhm at VGS = 10 V |
| Total Gate Charge (Qg) | — | 22 nC |
| Power Dissipation (Pd) at Tc = 25 C | — | 71 W |
| Encapsulado / Carcasa | — | TO-252AA (DPAK) |
| Number of Units in IC | — | 1 |
| Avalanche Rated | — | Yes (HEXFET family) |